Specific Process Knowledge/Etch/DRIE-Pegasus: Difference between revisions
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!style="background:silver; color:black" align="center" valign="center" rowspan="2"|Performance | !style="background:silver; color:black" align="center" valign="center" rowspan="2"|Performance | ||
|style="background: | |style="background:whitesmoke; color:black"|Etch rates | ||
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* Standard processes A and B up to 15 µm/min depending on etch load and feature size | * Standard processes A and B up to 15 µm/min depending on etch load and feature size | ||
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|style="background:LightGrey; color:black"|Uniformity | |style="background:LightGrey; color:black"|Uniformity | ||
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* For standard processes better than 3 % across a 150 mm wafer. | * For standard processes better than 3 % across a 150 mm wafer. | ||
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