Specific Process Knowledge/Thin film deposition/Deposition of TiW: Difference between revisions
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This is done by a sputtering process. Process parameters (argon pressure and effect) can be varied, the surface roughness and the deposition rate (see [[/Sputtering of TiW in Wordentec|here]]) and may change with these settings. | This is done by a sputtering process. Process parameters (argon pressure and effect) can be varied, the surface roughness and the deposition rate (see [[/Sputtering of TiW in Wordentec|here]]) and may change with these settings. | ||
'''Deposited film characteristics''' | |||
AFM pictures show how the surface roughness is dependent of the process parameters, this can be seen here. | |||
Revision as of 09:46, 9 September 2008
Deposition of TiW alloy can take place in the Wordentec.
| Sputter deposition (Wordentec) | |
|---|---|
| Batch size |
|
| Pre-clean | RF Ar clean |
| Layer thickness | . |
| Deposition rate | Depending on process parameters, see here. |
This is done by a sputtering process. Process parameters (argon pressure and effect) can be varied, the surface roughness and the deposition rate (see here) and may change with these settings.
Deposited film characteristics
AFM pictures show how the surface roughness is dependent of the process parameters, this can be seen here.