Specific Process Knowledge/Etch/III-V ICP/InP-InGaAsP-InGaAs: Difference between revisions

Revision as of 10:57, 20 June 2018 view source Bghe (talk \| contribs) DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers, Bureaucrats, Administrators 7,317 edits →Sample pattern before etching ← Older edit		Revision as of 08:03, 28 June 2018 view source Bghe (talk \| contribs) DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers, Bureaucrats, Administrators 7,317 edits →Etching of an InP piece on SiO2 carrier Newer edit →
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			===Changing the Cl2/N2 ratio===