Specific Process Knowledge/Etch/III-V ICP/InP-InGaAsP-InGaAs: Difference between revisions
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Image:S0_oxide_01.jpg | Image:S0_oxide_01.jpg|Top view of the SiO2 mask before etching | ||
Image:S0_oxide_02.jpg | Image:S0_oxide_02.jpg|Top view of the SiO2 mask before etching | ||
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Revision as of 10:57, 20 June 2018
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InP/InGaAsP/InGaAs etch
Unselective etch for large sized features and small aspect ratios by David Larsson, DTU Photonics, 2011
Recipe | InP Etch 1/InP Precond 1 |
Cl2 flow | 20 sccm |
N2 flow | 40 sccm |
Ar flow | 10 sccm |
Platen power | 100 W |
Coil power | 500 W |
Pressure | 2 mTorr |
Platen chiller temperature | 180 oC |
Comment | Use SiO2 carrier (not Si) (Kabi/Bghe June 2018) |
Results (InP Etch 1) | |
Etch rate | 500-600 nm/min |
Sidewall angle | 86-87 o |
Selectivity (InP:SiO2, InP:HSQ) | 50:1 |
InP etching June 2018
Sample pattern before etching
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Top view of the SiO2 mask before etching
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Top view of the SiO2 mask before etching
Etching of an InP piece on Si carrier
InP piece patterned with SiO2. The piece was etched on top of a Si wafer without bonding. The recipe "InP etch" was used. The roughness looks high in the bottom of the etched areas, especially in the large open areas.
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low roughness in narrow trenched
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low roughness in narrow trenched
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A little higher roughnedd is larger trences
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Much larger roughness in open areas
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Zoom in on the large roughness
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closed look at the large roughness in the open areas.
Etching of an InP piece on SiO2 carrier
InP piece patterned with SiO2. The piece was etched on top of a Si wafer coated with SiO2 without bonding. The recipe "InP etch" was used. The roughness looks low in the bottom of the etched areas, even in the large open areas.
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Top view: oxide is gone on the narrow lines, low roughness in the trenches.
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Top view: low roughness in the trenches.
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30 dg view: low roughness in the trenches
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30 dg view: low roughness in the trenches
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Top view: low roughness in trench and in the large area