Specific Process Knowledge/Etch/III-V ICP/InP-InGaAsP-InGaAs: Difference between revisions

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<gallery caption="Result of InP etching."  widths="500px" heights="400px" perrow="3">
<gallery caption="Result of InP etching."  widths="500px" heights="400px" perrow="3">


Image:S0_oxide_01.jpg
Image:S0_oxide_01.jpg|Top view of the SiO2 mask before etching
Image:S0_oxide_02.jpg
Image:S0_oxide_02.jpg|Top view of the SiO2 mask before etching


</gallery>
</gallery>

Revision as of 10:57, 20 June 2018

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InP/InGaAsP/InGaAs etch

Unselective etch for large sized features and small aspect ratios by David Larsson, DTU Photonics, 2011

Recipe InP Etch 1/InP Precond 1
Cl2 flow 20 sccm
N2 flow 40 sccm
Ar flow 10 sccm
Platen power 100 W
Coil power 500 W
Pressure 2 mTorr
Platen chiller temperature 180 oC
Comment Use SiO2 carrier (not Si) (Kabi/Bghe June 2018)


Results (InP Etch 1)
Etch rate 500-600 nm/min
Sidewall angle 86-87 o
Selectivity (InP:SiO2, InP:HSQ) 50:1

InP etching June 2018

Sample pattern before etching

Etching of an InP piece on Si carrier

InP piece patterned with SiO2. The piece was etched on top of a Si wafer without bonding. The recipe "InP etch" was used. The roughness looks high in the bottom of the etched areas, especially in the large open areas.

Etching of an InP piece on SiO2 carrier

InP piece patterned with SiO2. The piece was etched on top of a Si wafer coated with SiO2 without bonding. The recipe "InP etch" was used. The roughness looks low in the bottom of the etched areas, even in the large open areas.