Specific Process Knowledge/Etch/III-V ICP/InP-InGaAsP-InGaAs: Difference between revisions
| Line 30: | Line 30: | ||
|180 <sup>o</sup>C | |180 <sup>o</sup>C | ||
|- | |- | ||
|Comment | |||
|Use SiO2 carrier (not Si) ''(Kabi/Bghe June 2018)'' | |||
|} | |} | ||
Bghe (talk | contribs) DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers, Bureaucrats, Administrators 7,318 edits |
Bghe (talk | contribs) DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers, Bureaucrats, Administrators 7,318 edits |
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| Line 30: | Line 30: | ||
|180 <sup>o</sup>C | |180 <sup>o</sup>C | ||
|- | |- | ||
|Comment | |||
|Use SiO2 carrier (not Si) ''(Kabi/Bghe June 2018)'' | |||
|} | |} | ||