Jump to content

Specific Process Knowledge/Etch/III-V ICP/InP-InGaAsP-InGaAs: Difference between revisions

← Older editNewer edit →
VisualWikitext
Bghe (talk | contribs)
DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers, Bureaucrats, Administrators
7,317 edits
Bghe (talk | contribs)
DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers, Bureaucrats, Administrators
7,317 edits
Line 81: Line 81:
Image:S4_30dg_midt_10.jpg| 30 dg view: low roughness in the trenches
Image:S4_30dg_midt_10.jpg| 30 dg view: low roughness in the trenches
Image:S4_30dg_midt_11.jpg|30 dg view: low roughness in the trenches
Image:S4_30dg_midt_11.jpg|30 dg view: low roughness in the trenches
Image:S4_midt_05.jpg|: top view low roughness in trench and in the large area
Image:S4_midt_05.jpg|Top view: low roughness in trench and in the large area




</gallery>
</gallery>
Retrieved from "https://labadviser.nanolab.dtu.dk//index.php?title=Specific_Process_Knowledge/Etch/III-V_ICP/InP-InGaAsP-InGaAs"