Specific Process Knowledge/Etch/III-V ICP/InP-InGaAsP-InGaAs: Difference between revisions

Revision as of 12:23, 19 June 2018

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InP/InGaAsP/InGaAs etch

Unselective etch for large sized features and small aspect ratios by David Larsson, DTU Photonics, 2011

Recipe	InP Etch 1/InP Precond 1
Cl₂ flow	20 sccm
N₂ flow	40 sccm
Ar flow	10 sccm
Platen power	100 W
Coil power	500 W
Pressure	2 mTorr
Platen chiller temperature	180 ^oC

Results (InP Etch 1)
Etch rate	500-600 nm/min
Sidewall angle	86-87 ^o
Selectivity (InP:SiO₂, InP:HSQ)	50:1

Result of InP etching. David Larsson, DTU Photonics, 2011

InP etching June 2018

Etching of an InP piece on Si carrier

InP piece patterned with SiO2. The piece was etched on top of a Si wafer without bonding. The recipe "InP etch" was used. The roughness looks high in the bottom of the etched areas, especially the large open areas.

Result of InP etching.
low roughness in narrow trenched
low roughness in narrow trenched
A little higher roughnedd is larger trences
Much larger roughness in open areas
Zoom in on the large roughness
closed look at the large roughness in the open areas.

@@ Line 59: / Line 59: @@
 ==InP etching June 2018==
-===With InP piece on Si carrier===
+===Etching of an InP piece on Si carrier===
-InP piece patterned with SiO2. The pice was etched on top of a Si wafer without bonding. The "InP etch" was used.
+InP piece patterned with SiO2. The piece was etched on top of a Si wafer without bonding. The recipe "InP etch" was used. The roughness looks high in the bottom of the etched areas, especially the large open areas.
 <gallery caption="Result of InP etching."  widths="500px" heights="400px" perrow="3">