Specific Process Knowledge/Etch/III-V ICP/InP-InGaAsP-InGaAs: Difference between revisions

From LabAdviser
Bghe (talk | contribs)
Bghe (talk | contribs)
Line 60: Line 60:
==InP etching June 2018==
==InP etching June 2018==
===With InP piece on Si carrier===
===With InP piece on Si carrier===
InP piece patterned with SiO2. The pice was etched on topof a Siwafer with out bonding. The InP etch was used.
InP piece patterned with SiO2. The pice was etched on top of a Si wafer without bonding. The "InP etch" was used.
<gallery caption="Result of InP etching."  widths="500px" heights="400px" perrow="3">
<gallery caption="Result of InP etching."  widths="500px" heights="400px" perrow="3">


Image:S1_30dg_09.jpg
Image:S1_30dg_09.jpg|low roughness in narrow trenched
Image:S1_30dg_10.jpg
Image:S1_30dg_10.jpg|low roughness in narrow trenched
Image:S1_30dg_midt_14.jpg
Image:S1_30dg_midt_14.jpg|A little higher roughnedd is larger trences
Image:S1_30dg_midt_13.jpg
Image:S1_30dg_midt_13.jpg|Much larger roughness in open areas
Image:S1_30dg_midt_12.jpg
Image:S1_30dg_midt_12.jpg|Zoom in on the large roughness
Image:S1_30dg_midt_11.jpg
Image:S1_30dg_midt_11.jpg|closed look at the large roughness in the open areas.
</gallery>
</gallery>

Revision as of 12:20, 19 June 2018

Feedback to this page: click here

InP/InGaAsP/InGaAs etch

Unselective etch for large sized features and small aspect ratios by David Larsson, DTU Photonics, 2011

Recipe InP Etch 1/InP Precond 1
Cl2 flow 20 sccm
N2 flow 40 sccm
Ar flow 10 sccm
Platen power 100 W
Coil power 500 W
Pressure 2 mTorr
Platen chiller temperature 180 oC


Results (InP Etch 1)
Etch rate 500-600 nm/min
Sidewall angle 86-87 o
Selectivity (InP:SiO2, InP:HSQ) 50:1

InP etching June 2018

With InP piece on Si carrier

InP piece patterned with SiO2. The pice was etched on top of a Si wafer without bonding. The "InP etch" was used.