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Specific Process Knowledge/Etch/III-V ICP/InP-InGaAsP-InGaAs: Difference between revisions

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DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers, Bureaucrats, Administrators
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===With InP piece on Si carrier===
===With InP piece on Si carrier===
InP piece patterned with SiO2. The pice was etched on topof a Siwafer with out bonding. The InP etch was used.
InP piece patterned with SiO2. The pice was etched on topof a Siwafer with out bonding. The InP etch was used.
<gallery caption="Result of InP etching."  width="5000px" height="4000px" perrow="3">
<gallery caption="Result of InP etching."  widths="500px" heights="400px" perrow="3">
Image:S1_00.jpg
 
Image:S1_30dg_01.jpg
Image:S1_30dg_02.jpg
Image:S1_30dg_03.jpg
Image:S1_30dg_04.jpg
Image:S1_30dg_05.jpg
Image:S1_30dg_06.jpg
Image:S1_30dg_07.jpg
Image:S1_30dg_08.jpg
Image:S1_30dg_09.jpg
Image:S1_30dg_09.jpg
Image:S1_30dg_10.jpg
Image:S1_30dg_10.jpg
Image:S1_30dg_midt_14.jpg
Image:S1_30dg_midt_13.jpg
Image:S1_30dg_midt_12.jpg
Image:S1_30dg_midt_11.jpg
Image:S1_30dg_midt_11.jpg
Image:S1_30dg_midt_12.jpg
Image:S1_30dg_midt_13.jpg
Image:S1_30dg_midt_14.jpg
</gallery>
</gallery>
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