Specific Process Knowledge/Etch/III-V ICP/InP-InGaAsP-InGaAs: Difference between revisions
No edit summary |
|||
| Line 61: | Line 61: | ||
===With InP piece on Si carrier=== | ===With InP piece on Si carrier=== | ||
InP piece patterned with SiO2. The pice was etched on topof a Siwafer with out bonding. The InP etch was used. | InP piece patterned with SiO2. The pice was etched on topof a Siwafer with out bonding. The InP etch was used. | ||
<gallery | <gallery caption="Result of InP etching." width="5000px" height="4000px" perrow="3"> | ||
caption="Result of InP etching." | |||
Image:S1_00.jpg | Image:S1_00.jpg | ||
Image:S1_30dg_01.jpg | Image:S1_30dg_01.jpg | ||