Specific Process Knowledge/Lithography/Aligners/Aligner: Maskless 01 processing: Difference between revisions
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=Optimal use of the maskless aligner= | =Optimal use of the maskless aligner= | ||
As seen in the section on [[Specific_Process_Knowledge/Lithography/Aligners/Aligner:_Maskless_01_processing#Writing_speed|writing speed]], the exposure speed of Aligner: Maskless 01 is around 0.02min/ | As seen in the section on [[Specific_Process_Knowledge/Lithography/Aligners/Aligner:_Maskless_01_processing#Writing_speed|writing speed]], the exposure speed of Aligner: Maskless 01 is around 0.02min/mm<sup>2</sup>, or 50mm<sup>2</sup>/min, at a dose of 100mJ/cm<sup>2</sup>, yielding exposure times in excess of 2 hours for a 4" wafer. | ||
At this exposure | At this exposure speed, we would quickly run into a bottleneck as more and more users expose more and more wafers, if full 4" designs are used all the time. Another concern is that the exposure dose seems to be unstable over long exposure times, as consecutive exposures using the same parameters have been observed to yield different lithographic results. The conclusion is that exposure using the maskless aligner requires a different design philosophy than when a mask aligner is used for the exposure. | ||
==Design philosophy== | ==Design philosophy== | ||