Specific Process Knowledge/Etch/DRIE-Pegasus/System-description: Difference between revisions
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== Description of the Bosch process at the DRIE-Pegasus == | == Description of the Bosch process at the DRIE-Pegasus == | ||
--[[User:jmli|jmli]] ([[User talk:jmli|talk]]) | --[[User:jmli|jmli]] ([[User talk:jmli|talk]]) 26 November 2012 | ||
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The DRIE-Pegasus takes the well established Bosch process known from the [[Specific_Process_Knowledge/Etch/ASE_(Advanced_Silicon_Etch)|ASE]] a significant step further. In the ASE the Bosch process has two cycles, etch and passivation. During each cycle the process parameters are kept constant: | The DRIE-Pegasus takes the well established Bosch process known from the [[Specific_Process_Knowledge/Etch/ASE_(Advanced_Silicon_Etch)|ASE]] a significant step further. In the ASE the Bosch process has two cycles, etch and passivation. During each cycle the process parameters are kept constant: | ||
*In the passivation cycle, a C<sub>4</sub>F<sub>8</sub> plasma is formed using the RF coil power only and a teflon-like coating is created on all surfaces thus protecting the sidewalls in the subsequent etch cycle. | *In the passivation cycle, a C<sub>4</sub>F<sub>8</sub> plasma is formed using the RF coil power only and a teflon-like coating is created on all surfaces thus protecting the sidewalls in the subsequent etch cycle. | ||