Specific Process Knowledge/Lithography/EBeamLithography: Difference between revisions
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!style="background:silver; color:black" align="left" valign="top" rowspan="2"|Performance | !style="background:silver; color:black" align="left" valign="top" rowspan="2"|Performance | ||
|style="background:LightGrey; color:black"|Resolution | |style="background:LightGrey; color:black"|Resolution | ||
|style="background:WhiteSmoke; color:black"|~5 nm beam diameter, ~10 nm lines obtained in 50 nm thick resist (CSAR) | |style="background:WhiteSmoke; color:black"|~5 nm beam diameter, ~10 nm lines obtained in 50 nm thick resist (CSAR), 7 nm in HSQ | ||
|style="background:WhiteSmoke; color:black"|~70 nm lines obtained in 50 nm thick resist (CSAR) | |style="background:WhiteSmoke; color:black"|~70 nm lines obtained in 50 nm thick resist (CSAR) | ||
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