Specific Process Knowledge/Characterization/XPS/XPS Depth profiling: Difference between revisions

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 This means that only atoms sitting in the topmost nanometers of the sample contribute to the intensity of the peak making the technique very surface sensitive. To access deeper layers of the sample one can use the argon ion gun to sputter off the surface layers of the sample - and then record a new set of spectra. A series with cycles of measurement with subsequent sputtering can be set up in this way creating a depth profile of the sample.
-'''Example: NiCr film'''
+== Example: Si wafer thin layers of oxide, nitride and polysilicon ==
-As an example, to the left is shown a depth profile of a sample
+Below is an example of a depth profile. The sample is a sandwich of:
+* Silicon wafer
+* Silicon oxide
+* Silicon nitride
+* Polysilicon
 [[File:profile sandwich 3.PNG|700px]]
-As an illustration, a figure to the left, shows an elemental analysis through a metallic film consisting of Ni and Cr. The metallic layer was about 70 nm thick, and the atomic percentage of Ni and Cr was measured through the layer.
-In the graph, you see the atomic % as a function of etch depth, and it is possible to detect that the relationship between Ni and Cr is fairly constant through the metallic film.