Specific Process Knowledge/Thin film deposition/Deposition of Hafnium Oxide: Difference between revisions

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More information about hafnium oxide deposition can be found here: for [[Specific Process Knowledge/Thin film deposition/ALD Picosun R200/HfO2 deposition using ALD|ALD1]] and for [[Specific Process Knowledge/Thin film deposition/ALD2 (PEALD)/HfO2 deposition using ALD2|ALD2 (PEALD)]].
More information about hafnium oxide deposition can be found here: for [[Specific Process Knowledge/Thin film deposition/ALD Picosun R200/HfO2 deposition using ALD|ALD1]] and for [[Specific Process Knowledge/Thin film deposition/ALD2 (PEALD)/HfO2 deposition using ALD2|ALD2 (PEALD)]].


==Only method at the moment for the deposition of hafnium oxide==
==Deposition of hafnium oxide==


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*HfO2
*HfO2
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* 0 nm - 50 nm  
* 0 nm - 50 nm  
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* 0.0827 nm/cycle on a flat sample
* 0.0827 nm/cycle on a flat sample
* 0.954-0.122 nm/cycle on a high aspect ratio structures
* 0.954-0.122 nm/cycle on a high aspect ratio structures
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*Very good
*Very good
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* 150 - 300<sup>o</sup>C
* 150 - 300<sup>o</sup>C
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*1-5 100 mm wafers
*1-5 100 mm wafers
*1-5 150 mm wafer
*1-5 150 mm wafer
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*III-V materials (use dedicated carrier wafer)
*III-V materials (use dedicated carrier wafer)
*Polymers (depending on the melting point/deposition temperature, use carrier wafer)
*Polymers (depending on the melting point/deposition temperature, use carrier wafer)
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Revision as of 12:47, 14 May 2018

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Deposition of Hafnium Oxide

Thin films of hafnium oxide, HfO2, can both be deposited both in the ALD1 and the ALD2 (PEALD). However, it is preferred to use the ALD1, as the ALD2 is mainly dedicated for nitride deposition.

More information about hafnium oxide deposition can be found here: for ALD1 and for ALD2 (PEALD).

Deposition of hafnium oxide

ALD
Generel description
  • Atomic Layer Deposition
Stoichiometry
  • HfO2
Film Thickness
  • 0 nm - 50 nm
Deposition rate
  • 0.0827 nm/cycle on a flat sample
  • 0.954-0.122 nm/cycle on a high aspect ratio structures
Step coverage
  • Very good
Process Temperature
  • 150 - 300oC
Substrate size
  • Several small samples
  • 1-5 50 mm wafers
  • 1-5 100 mm wafers
  • 1-5 150 mm wafer
Allowed materials
  • Silicon
  • Silicon oxide, silicon nitride
  • Quartz/fused silica
  • Al, Al2O3
  • Ti, TiO2
  • Other metals (use dedicated carrier wafer)
  • III-V materials (use dedicated carrier wafer)
  • Polymers (depending on the melting point/deposition temperature, use carrier wafer)
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