Specific Process Knowledge/Etch/DRIE-Pegasus/DUVetch

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Etch processes designed for stepper resists

The stepper produces features down to 200 nm. Here, etch processes especially designed for stepper patterns and resists are described. We intend to develop them continuously so keep an eye on this page. The best ones so far are:

Process parameters

Recipe	Step	Temp.	Deposition step						Etch step														Process
			Time	Pressure	C4F8	SF6	O2	Coil	Time		Pressure		C4F8		SF6		O2		Coil		Platen		HW	Runs	Keywords
									B	M	B	M	B	M	B	M	B	M	B	M	B	M
NBoost04	A	20	2.8	5	60	0	0	500	1.5	3.5	30%	5	0	20	100	100	0	0	500	500	50	10	LF+B100	2	VERY nice: scallops, straight sidewalls

Process parameters

Recipe	Step	Temp.	Deposition step						Etch step							Process observations
			Time	Pressure	C4F8	SF6	O2	Coil	Time	Pressure	C4F8	SF6	O2	Coil	Platen	HW	Runs	Key words
polySOI-10	etch	20	2.5	10	50	0	0	600	5	10	20	60	5	400	40	-	5	very nice, blurred scallops
polySOI-10a	etch	20	2.5	10	50	0	0	600	5	10	10	70	5	400	40	-	200+	Works only with limited open area - probably less than 20 %, very stable, excellent and extensive track record