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Specific Process Knowledge/Lithography/Aligners/Aligner: Maskless 01 processing: Difference between revisions

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<!--[[Image:section under construction.jpg|70px]]-->
<!--[[Image:section under construction.jpg|70px]]-->
==Exposure dose==
The exposure dose needed in the Aligner: Maskless 01 seems to follow the dose needed to process the same substrate in Aligner: MA6-2. As doses get higher, there is a tendency for the dose needed in the Aligner: Maskless 01 to exceed the dose needed in Aligner: MA6-2.
==Defocus==
The optimal defocus setting is probably a function of the resist thickness, but for 1.5µm resist, a defocus of -4 seems to be optimal.
==Writing speed==
Please see the section [[Specific_Process_Knowledge/Lithography/Aligners/Aligner:_Maskless_01_processing#Optimal_use_of_the_maskless_aligner|below]].


==Resolution[[Image:section under construction.jpg|70px]]==
==Resolution[[Image:section under construction.jpg|70px]]==
The pixel-size of the DMM is 0.5µmX0.5µm (at the sample surface), so this is the ultimate resolution of the Aligner: Maskless 01, and also the smallest step that will produce features of different size. The lithographic resolution of the machine is 1µm on paper, which was demonstrated in the acceptance test after installation. The resist thickness needed for this resolution is 0.5µm. In 1.5µm thick resist, the resolution is around 2-3µm.
The pixel-size of the DMM is 0.5µmX0.5µm (at the sample surface), so this is the ultimate resolution of the Aligner: Maskless 01, and also the smallest step that will produce features of different size. The lithographic resolution of the machine is 1µm on paper, which was demonstrated in the acceptance test after installation. The resist thickness needed for this resolution is 0.5µm. In 1.5µm thick resist, the resolution is around 2-3µm.


===Resolution vs resist thickness===
{|border="1" cellspacing="0" cellpadding="3" style="text-align:left;"
|-


|-
|-style="background:silver; color:black"
!
!As designed
!With OPC (0.5µm corner serifs)
|-


===Optical proximity correction===
|-
|-style="background:WhiteSmoke; color:black"
|Design
|[[Image:5214E DEV HighResolution crop.jpg|350px]]
|[[Image:5214E DEV overview crop.jpg|350px]]


==Exposure dose==
|-
The exposure dose needed in the Aligner: Maskless 01 seems to follow the dose needed to process the same substrate in Aligner: MA6-2. As doses get higher, there is a tendency for the dose needed in the Aligner: Maskless 01 to exceed the dose needed in Aligner: MA6-2.
|-style="background:WhiteSmoke; color:black"
|1.5µm AZ 5214E
Dose: 80, Defoc: -3
Development: SP 60s
|[[Image:MiR HighResolution crop.jpg|350px]]
|[[Image:MiR overview crop.jpg|350px]]


==Defocus==
|-
The optimal defocus setting is probably a function of the resist thickness, but for 1.5µm resist, a defocus of -4 seems to be optimal.
|-style="background:WhiteSmoke; color:black"
|0.5µ AZ 5214E (diluted)
Dose: 80, Defoc: -3
Development: SP 30s
|[[Image:5214E HighResolution crop.jpg|350px]]
|[[Image:5214E Overview crop.jpg|350px]]


==Writing speed==
|}
Please see the section [[Specific_Process_Knowledge/Lithography/Aligners/Aligner:_Maskless_01_processing#Optimal_use_of_the_maskless_aligner|below]].


=Substrate positioning=
=Substrate positioning=
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