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Specific Process Knowledge/Thin film deposition/PECVD: Difference between revisions

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!colspan="2" border="none" style="background:silver; color:black;" align="center"|PECVD  
!colspan="2" border="none" style="background:silver; color:black;" align="center"|PECVD  
|style="background:WhiteSmoke; color:black"|<b>PECVD2</b> - ''Will be decommissioned soon!''
|style="background:WhiteSmoke; color:black"|<b>PECVD3</b>
|style="background:WhiteSmoke; color:black"|<b>PECVD3</b>
|style="background:WhiteSmoke; color:black"|<b>PECVD4</b>  
|style="background:WhiteSmoke; color:black"|<b>PECVD4</b>  
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*Silicon oxynitride
*Silicon oxynitride
*BPSG (Boron Phosphorous doped Silica Glass)
*BPSG (Boron Phosphorous doped Silica Glass)
*Silicon oxide doped with Germanium
|
*Silicon oxide
*Silicon nitride
*Silicon oxynitride
*BPSG (Boron Phosphorous doped Silica Glass)
*Silicon oxide doped with Germanium
|
|
*Silicon oxide
*Silicon oxide
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|style="background:LightGrey; color:black"|Film thickness
|style="background:LightGrey; color:black"|Film thickness
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*~10nm - 30µm
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*~10nm - 30µm
*~10nm - 30µm
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|
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|style="background:LightGrey; color:black"|Index of refraction
|style="background:LightGrey; color:black"|Index of refraction
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*~1.4-2.1
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*~1.4-2.1
*~1.4-2.1
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|
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|style="background:LightGrey; color:black"|Step coverage
|style="background:LightGrey; color:black"|Step coverage
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*In general: Not so good
*BPSG: Floats at 1000<sup>o</sup>C
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*In general: Not so good
*In general: Not so good
*BPSG: Floats at 1000<sup>o</sup>C
*BPSG: Floats at 1000<sup>o</sup>C
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|style="background:LightGrey; color:black"|Film quality
|style="background:LightGrey; color:black"|Film quality
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*Not so dense film
*Hydrogen will be incorporated in the films
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*Not so dense film
*Not so dense film
*Hydrogen will be incorporated in the films
*Hydrogen will be incorporated in the films
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|style="background:LightGrey; color:black"|Process Temperature
|style="background:LightGrey; color:black"|Process Temperature
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*300 <sup>o</sup>C
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*300 <sup>o</sup>C
*300 <sup>o</sup>C
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|
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|style="background:LightGrey; color:black"|Process pressure
|style="background:LightGrey; color:black"|Process pressure
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*~200-900 mTorr
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*~200-900 mTorr
*~200-900 mTorr
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|
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|style="background:LightGrey; color:black"|Gas flows
|style="background:LightGrey; color:black"|Gas flows
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*SiH<sub>4</sub>:0-50 sccm
*N<sub>2</sub>O:0-4260 sccm
*NH<sub>3</sub>:0-740 sccm
*N<sub>2</sub>:0-3000 sccm
*GeH<sub>4</sub>:0-6.00 sccm
*5%PH<sub>3</sub>:0-100 sccm
*3%B<sub>2</sub>H<sub>6</sub>:0-1000 sccm
|
*SiH<sub>4</sub>:0-60 sccm
*SiH<sub>4</sub>:0-60 sccm
*N<sub>2</sub>O:0-3000 sccm
*N<sub>2</sub>O:0-3000 sccm
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|style="background:LightGrey; color:black"|Batch size
|style="background:LightGrey; color:black"|Batch size
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*1-3 4" wafer per run
*1 6" wafer per run
*Or several smaller pieces
*Deposition on one side of the substrate
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*One 4" wafer per run
*One 4" wafer per run
*One 6" wafer per run
*One 6" wafer per run
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| style="background:LightGrey; color:black"|Materials allowed
| style="background:LightGrey; color:black"|Materials allowed
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*Silicon wafers, Quartz (fused silica) wafers,
**with layers of silicon oxide or silicon (oxy)nitride
*III-V wafers (on special carriers)
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*Silicon wafers, Quarts (fused silica) wafers
*Silicon wafers, Quarts (fused silica) wafers
**with layers of silicon oxide or silicon (oxy)nitride
**with layers of silicon oxide or silicon (oxy)nitride
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