Specific Process Knowledge/Etch/Etching of Silicon: Difference between revisions
| Line 25: | Line 25: | ||
![[Specific Process Knowledge/Etch/KOH Etch|Si Etch]] | ![[Specific Process Knowledge/Etch/KOH Etch|Si Etch]] | ||
![[Specific Process Knowledge/Etch/Wet Polysilicon Etch|Wet PolySilicon etch]] | ![[Specific Process Knowledge/Etch/Wet Polysilicon Etch|Wet PolySilicon etch]] | ||
![[Specific Process Knowledge/Etch/DRIE-Pegasus|DRIE-Pegasus (Deep Reactive Ion Etch)]] | ![[Specific Process Knowledge/Etch/DRIE-Pegasus|DRIE-Pegasus (Deep Reactive Ion Etch)]] | ||
![[Specific Process Knowledge/Etch/ASE (Advanced Silicon Etch)|ASE (Advanced Silicon Etch)]] | ![[Specific Process Knowledge/Etch/ASE (Advanced Silicon Etch)|ASE (Advanced Silicon Etch)]] | ||
| Line 41: | Line 40: | ||
| | | | ||
*Isotropic etch in crystalline silicon and polysilicon | *Isotropic etch in crystalline silicon and polysilicon | ||
| | | | ||
*State-of-the-art dry silicon etcher with atmospheric cassette loader | *State-of-the-art dry silicon etcher with atmospheric cassette loader | ||
| Line 48: | Line 45: | ||
*Extremely high etch rate and advanced processing options | *Extremely high etch rate and advanced processing options | ||
| | | | ||
* | *Can etch isotropic and anisotropic depending on the process parameters and mask design | ||
*Good selectivity to photoresist | *Good selectivity to photoresist | ||
*The ASE | *The ASE open for same metal on the samples and SiO2 etching, which can affect the Si etch stability. | ||
| | | | ||
*This is dedicated to metal etch. So fare only Si etch of nanostructures has been explored on the system. | *This is dedicated to metal etch. So fare only Si etch of nanostructures has been explored on the system. | ||
| Line 63: | Line 60: | ||
*Silicon Nitride | *Silicon Nitride | ||
*Silicon Oxide | *Silicon Oxide | ||
| | | | ||
*Photo-, DUV- and e-beamresist | *Photo-, DUV- and e-beamresist | ||
| Line 105: | Line 98: | ||
| | | | ||
*~100-200 nm/min, highly dependent on doping level | *~100-200 nm/min, highly dependent on doping level | ||
| | | | ||
*Up to 18-20 µm/min depending on recipe, mask design and aspect ratio. | *Up to 18-20 µm/min depending on recipe, mask design and aspect ratio. | ||
| Line 134: | Line 125: | ||
*<nowiki>#</nowiki>1 100 mm wafer | *<nowiki>#</nowiki>1 100 mm wafer | ||
*<nowiki>#</nowiki>1 150 mm wafers (only when the system is set up to 150mm) | *<nowiki>#</nowiki>1 150 mm wafers (only when the system is set up to 150mm) | ||
| | | | ||
*As many small samples as can be fitted on a 150mm wafer | *As many small samples as can be fitted on a 150mm wafer | ||
| Line 165: | Line 151: | ||
*Silicon Oxynitride | *Silicon Oxynitride | ||
*Photoresist | *Photoresist | ||
| | | | ||
*Silicon | *Silicon | ||
| Line 189: | Line 167: | ||
*Aluminium | *Aluminium | ||
*Quartz/fused silica | *Quartz/fused silica | ||
*Other metals if they cover less than 5% of the wafer area | |||
| | | | ||
*Silicon | *Silicon | ||