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Specific Process Knowledge/Etch/Etching of Silicon Nitride: Difference between revisions

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*PECVD nitride: ~400-1000 Å/min
*PECVD nitride: ~400-1000 Å/min
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*Typically 40-50 nm/min can be increased or decreased by using other recipe parameters.
*Probably betweeb 20-300 nm/min depending on the process parameters  
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*Process dependent.  
*Process dependent.  
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