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| Line 36: |
Line 36: |
| *[[/ProcessInfo#Mixing KOH|How to mix KOH]] | | *[[/ProcessInfo#Mixing KOH|How to mix KOH]] |
| *[[/ProcessInfo#Theory|Crystal orientation dependency]] | | *[[/ProcessInfo#Theory|Crystal orientation dependency]] |
|
| |
| ===Quality Control (QC) for the KOH Si etching baths.===
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|
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| {| border="1" cellspacing="2" cellpadding="2" colspan="3"
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| |bgcolor="#98FB98" |'''Quality Control (QC) for Si Etch 01, and Si Etch 02'''
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| |-
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| |
| |
| *[http://labmanager.danchip.dtu.dk/d4Show.php?id=3203&mach=9 The QC procedure for Si Etch: 01]<br>
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| *[http://labmanager.danchip.dtu.dk/d4Show.php?id=1565&mach=248 The QC procedure for Si Etch: 01]<br>
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| *[http://labmanager.danchip.dtu.dk/view_binary.php?type=data&mach=49 The newest QC data for KOH2]<br>
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| *[http://labmanager.danchip.dtu.dk/view_binary.php?type=data&mach=248 The newest QC data for KOH3]<br>
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| {| {{table}}
| |
| | align="center" |
| |
| {| border="1" cellspacing="1" cellpadding="2" align="center" style="width:200px"
| |
|
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| ! QC Recipe:
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| !
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| |-
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| | Solution
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| |28 wt% KOH
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| |-
| |
| |Temperature
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| |80°C
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| |-
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| |Time
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| |90 min
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| |-
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| |Substrate
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| |Si (100)
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| |-|-
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| |Masking
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| |No masking
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| |-
| |
| |}
| |
| | align="center" valign="top"|
| |
| {| border="3" cellspacing="1" cellpadding="2" align="center" style="width:500px"
| |
| !QC limits
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| !Si Etch 01
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| !Si Etch 02
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| |-
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| |Etch rate in Si(100)
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| |1.3 ± 0.1 µm/min
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| |1.29 ± 0.06 µm/min
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| |-
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| |Roughness
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| | not measured
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| | not measured
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| |-
| |
| |Nonuniformity
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| |< 3%
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| |< 3%
| |
| |-
| |
| |}
| |
| |-
| |
| |}
| |
| |}
| |
|
| |
| <br clear="all" />
| |
|
| |
|
| ==KOH etching baths== | | ==KOH etching baths== |
