Specific Process Knowledge/Etch/KOH Etch/ProcessInfo: Difference between revisions
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==QC== | ==QC== | ||
===Quality Control (QC) for the KOH Si etching baths.=== | |||
{| border="1" cellspacing="2" cellpadding="2" colspan="3" | |||
|bgcolor="#98FB98" |'''Quality Control (QC) for Si Etch 01, and Si Etch 02''' | |||
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*[http://labmanager.danchip.dtu.dk/d4Show.php?id=3203&mach=9 The QC procedure for Si Etch: 01]<br> | |||
*[http://labmanager.danchip.dtu.dk/d4Show.php?id=1565&mach=248 The QC procedure for Si Etch: 01]<br> | |||
*[http://labmanager.danchip.dtu.dk/view_binary.php?type=data&mach=49 The newest QC data for KOH2]<br> | |||
*[http://labmanager.danchip.dtu.dk/view_binary.php?type=data&mach=248 The newest QC data for KOH3]<br> | |||
{| {{table}} | |||
| align="center" | | |||
{| border="1" cellspacing="1" cellpadding="2" align="center" style="width:200px" | |||
! QC Recipe: | |||
! | |||
|- | |||
| Solution | |||
|28 wt% KOH | |||
|- | |||
|Temperature | |||
|80°C | |||
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|Time | |||
|90 min | |||
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|Substrate | |||
|Si (100) | |||
|-|- | |||
|Masking | |||
|No masking | |||
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|} | |||
| align="center" valign="top"| | |||
{| border="3" cellspacing="1" cellpadding="2" align="center" style="width:500px" | |||
!QC limits | |||
!Si Etch 01 | |||
!Si Etch 02 | |||
|- | |||
|Etch rate in Si(100) | |||
|1.3 ± 0.1 µm/min | |||
|1.29 ± 0.06 µm/min | |||
|- | |||
|Roughness | |||
| not measured | |||
| not measured | |||
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|Nonuniformity | |||
|< 3% | |||
|< 3% | |||
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|} | |||
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|} | |||
|} | |||
<br clear="all" /> | |||
==Mixing KOH== | ==Mixing KOH== | ||
==Theori== | ==Theori== | ||
Revision as of 15:25, 13 March 2018
QC
Quality Control (QC) for the KOH Si etching baths.
| Quality Control (QC) for Si Etch 01, and Si Etch 02 | ||||||||||||||||||||||||||
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