Specific Process Knowledge/Thin film deposition/Furnace LPCVD PolySilicon: Difference between revisions
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The reactive gas is silane (SiH<sub>4</sub>). The dopant for boron doped polySi is BCl<sub>3</sub> - only available at request (6" polySi furnace) or B<sub>2</sub>H<sub>6</sub> (4" polySi furnace), and for phosphorous doped polySi the dopant is PH<sub>3</sub> (4" polySi furnace). For standard and doped polysilion the deposition takes place at a temperature of 600 <sup>o</sup>C - 620 <sup>o</sup>C and a pressure of 200-250 mTorr. For amorphous silicon the deposition temperature is lower, and thus the deposition rate is also lower. For phosphorus doped polySi the deposition rate is approximately ten times lower than for standard and boron doped polySi. Please check the cross contamination information in LabManager before you use any of the two furnaces. | The reactive gas is silane (SiH<sub>4</sub>). The dopant for boron doped polySi is BCl<sub>3</sub> - only available at request (6" polySi furnace) or B<sub>2</sub>H<sub>6</sub> (4" polySi furnace), and for phosphorous doped polySi the dopant is PH<sub>3</sub> (4" polySi furnace). For standard and doped polysilion the deposition takes place at a temperature of 600 <sup>o</sup>C - 620 <sup>o</sup>C and a pressure of 200-250 mTorr. For amorphous silicon the deposition temperature is lower, and thus the deposition rate is also lower. For phosphorus doped polySi the deposition rate is approximately ten times lower than for standard and boron doped polySi. Please check the cross contamination information in LabManager before you use any of the two furnaces. | ||
'''The user manuals, quality control procedures and results, technical information and contact information can be found in LabManager:''' | '''The user manuals, quality control procedures and results, technical information and contact information can be found in LabManager:''' | ||