Specific Process Knowledge/Thin film deposition/ALD Picosun R200: Difference between revisions
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[[image:ALD.jpg|300x300px|right|thumb|ALD1, positioned in cleanroom F-2.]] | [[image:ALD.jpg|300x300px|right|thumb|ALD1, positioned in cleanroom F-2.]] | ||
The ALD1 (Picosun R200 ALD) tool is used to deposit a very thin layer of Al<sub>2</sub>O<sub>3</sub>, TiO<sub>2</sub> (amorphous or anatase) and ZnO on different samples. | The ALD1 (Picosun R200 ALD) tool is used to deposit a very thin layer of Al<sub>2</sub>O<sub>3</sub>, TiO<sub>2</sub> (amorphous or anatase), HfO<sub>2</sub>, ZnO and AZO (Al doped ZnO) on different samples. | ||
Each process is using two different precursors. The reaction takes place in cycles. During each cycle, a very short pulse of each precursor is introduced into the ALD reaction chamber in turns, and in-between each precursor pulse the chamber is purged with nitrogen. All reactions have to take place on the sample surface, thus it is very important that each precursor is removed from the chamber before the next one is introduced. In that way, the ALD layer will be deposited atomic layer by atomic layer. | Each process is using two (or three for AZO) different precursors. The reaction takes place in cycles. During each cycle, a very short pulse of each precursor is introduced into the ALD reaction chamber in turns, and in-between each precursor pulse the chamber is purged with nitrogen. All reactions have to take place on the sample surface, thus it is very important that each precursor is removed from the chamber before the next one is introduced. In that way, the ALD layer will be deposited atomic layer by atomic layer. | ||
In order to ensure that the ALD reactor has the same temperature everywhere, it has a dual chamber structure. The inner chamber is the ALD reactor with the sample holder, and the outer chamber is a vacuum chamber that is isolating the reactor from room air. The space between the two chambers is called an intermediate space (IMS). The IMS is connected to a nitrogen carrier gas line. | In order to ensure that the ALD reactor has the same temperature everywhere, it has a dual chamber structure. The inner chamber is the ALD reactor with the sample holder, and the outer chamber is a vacuum chamber that is isolating the reactor from room air. The space between the two chambers is called an intermediate space (IMS). The IMS is connected to a nitrogen carrier gas line. | ||