Specific Process Knowledge/Lithography/Aligners/Aligner: Maskless 01 processing: Difference between revisions
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The results reported here use printed verniers to assess the misalignment along the two axes at different points on the wafer using an optical microscope. Two different designs were used; a ±5µm vernier and a ±1µm vernier. Both consist of a scale of 5µm lines with 10µm pitch, and a vernier scale to enable subdivision of the 5µm or 1µm scale into tenths, i.e. 0.5µm or 0.1µm. During read-out, symmetry enables the observer to measure with ±0.25µm or ±0.05µm accuracy. | The results reported here use printed verniers to assess the misalignment along the two axes at different points on the wafer using an optical microscope. Two different designs were used; a ±5µm vernier and a ±1µm vernier. Both consist of a scale of 5µm lines with 10µm pitch, and a vernier scale to enable subdivision of the 5µm or 1µm scale into tenths, i.e. 0.5µm or 0.1µm. During read-out, symmetry enables the observer to measure with ±0.25µm or ±0.05µm accuracy. | ||
<br/> | <br/>The samples are 100mm Si wafers coated with a 1.5µm layer of the positive tone resist AZ 5214E. | ||
==Stitching== | ==Stitching== | ||