Specific Process Knowledge/Etch/KOH Etch: Difference between revisions
| Line 140: | Line 140: | ||
*0.7 µm/min (70 °C) | *0.7 µm/min (70 °C) | ||
*1.3 µm/min (80 °C) | *1.3 µm/min (80 °C) | ||
|- | |||
|style="background:LightGrey; color:black"|Etch rates in crystalline silicon (110) | |||
|style="background:WhiteSmoke; color:black"| | |||
*2.5 µm/min (80 °C) | |||
|style="background:WhiteSmoke; color:black"| | |||
*2.5 µm/min (80 °C) | |||
|style="background:WhiteSmoke; color:black"| | |||
*2.5 µm/min (80 °C) | |||
|- | |- | ||
|style="background:LightGrey; color:black"|Etch rates in Thermal SiO2 | |style="background:LightGrey; color:black"|Etch rates in Thermal SiO2 | ||