Specific Process Knowledge/Etch/ASE (Advanced Silicon Etch): Difference between revisions
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*Silicon: ~0-15 µm/min (depending on features size and etch load) | *Silicon: ~0-15 µm/min (depending on features size and etch load) | ||
*Silicon oxide: <0.1 µm/min | |||
*Silicon nitride: <0.1 µm/min | |||
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|style="background:LightGrey; color:black"|Anisotropy | |style="background:LightGrey; color:black"|Anisotropy | ||