Specific Process Knowledge/Etch/DryEtchProcessing/Comparison: Difference between revisions

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 {| border="2" cellspacing="0" cellpadding="0" align="center"
 ! colspan="2" style="background:silver; color:black" |
-! style="background:silver; color:black" | [[Specific Process Knowledge/Etch/RIE_(Reactive_Ion_Etch)| RIE2]]
 ! style="background:silver; color:black" | [[Specific Process Knowledge/Etch/ASE_(Advanced_Silicon_Etch)| ASE]]
 ! style="background:silver; color:black" | [[Specific Process Knowledge/Etch/AOE_(Advanced_Oxide_Etch)| AOE]]
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 ! rowspan="2" style="background:silver; color:black" width="120" |Purpose
 ! style="background:WhiteSmoke; color:black" | Primary uses
-| style="background:WhiteSmoke; color:black"| The RIE chamber for etching of:
-* silicon
-* silicon oxides/nitrides
-The users are allowed to have 5% metal exposed to the plasma
 | style="background:WhiteSmoke; color:black"| Formerly the primary silicon etcher; now polymers may also be etched
 | style="background:WhiteSmoke; color:black"| Etching of silicon oxides or nitrides
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 |- valign="top"
 ! style="background:lightgrey; color:black" | Alternative/backup uses
-| style="background:lightgrey; color:black" | Shallow silicon etches
 | style="background:lightgrey; color:black" | Backup silicon etcher
 | style="background:lightgrey; color:black" |
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 ! rowspan="7" style="background:silver; color:black" | General description
 ! style="background:WhiteSmoke; color:black" | Plasma source
-| style="background:WhiteSmoke; color:black" | Parallel plate capacitor setup with RF power between the two electrodes
 | style="background:WhiteSmoke; color:black" |  Inductively coupled plasma chamber with two RF generators; the coil and platen generator
 | style="background:WhiteSmoke; color:black" |  Inductively coupled plasma chamber with two RF generators; the coil and platen generator
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 |-valign="top"
 ! style="background:lightgrey; color:black" | Substrate cooling/temperature
-| style="background:lightgrey; color:black" | The electrode is oil cooled: Fixed at 20<sup>o</sup>C
 | style="background:lightgrey; color:black" | The electrode is oil cooled. Also, Helium backside cooling: -10<sup>o</sup>C to 20<sup>o</sup>C
 | style="background:lightgrey; color:black" | The electrode is oil cooled. Also, Helium backside cooling: -10<sup>o</sup>C to 60<sup>o</sup>C
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 |-valign="top"
 ! style="background:WhiteSmoke; color:black" | Clamping
-| style="background:WhiteSmoke; color:black" | No clamping
 | style="background:WhiteSmoke; color:black" | Electrostatic clamping (semco electrode)
 | style="background:WhiteSmoke; color:black" | Electrostatic clamping (TDESC)
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 |-valign="top"
 ! style="background:lightgrey; color:black" | Gasses
-| style="background:lightgrey; color:black" |
-{|
-| SF<sub>6</sub>
-| O<sub>2</sub>
-| CF<sub>4</sub>
-|-
-| N<sub>2</sub>
-| Ar
-| CHF<sub>3</sub>
-|}
 | style="background:lightgrey; color:black" |
 {|
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 |-valign="top"
 !  style="background:WhiteSmoke; color:black" | RF generators
-| style="background:WhiteSmoke; color:black" |
-* RF generator
 |  style="background:WhiteSmoke; color:black" |
 * Coil generator
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 |-valign="top"
 ! style="background:lightgrey; color:black" | Substrate loading
-| style="background:lightgrey; color:black" | Loading via cluster 2 load lock
 | style="background:lightgrey; color:black" | Loading via dedicated two-slot carousel load lock
 | style="background:lightgrey; color:black" | Loading via dedicated two-slot carousel load lock
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 |-valign="top"
 !  style="background:WhiteSmoke; color:black" | Options
-| style="background:WhiteSmoke; color:black" | Optical endpoint detector at fixed wavelength
 | style="background:WhiteSmoke; color:black" |
 * Bosch multiplexing
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 ! style="background:silver; color:black"| Allowed materials
 | style="background:lightgrey; color:black" |
-| style="background:lightgrey; color:black" |
-* Silicon
-* Fused silica
-* Sapphire
-* SiC
 | style="background:lightgrey; color:black" |
 * Silicon