Specific Process Knowledge/Etch/Wet III-V Etches: Difference between revisions
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'''Feedback to this page''': '''[mailto:labadviser@ | '''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php?title=Specific_Process_Knowledge/Etch/Wet_III-V_Etches click here]''' | ||
[[Category: Equipment|Etch Wet III-V]] | [[Category: Equipment|Etch Wet III-V]] | ||
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This is a collection of III-V wet-etches; the rates should be tested before use. Make sure you have the proper education in mixing of chemicals before use. Wet etching of III-V materials is primarily to be done in 'Fume hood 07: III-V acids/bases'. Contact information, risk assessment and manual regarding this fume hood can be found in LabManager: | This is a collection of III-V wet-etches; the rates should be tested before use. Make sure you have the proper education in mixing of chemicals before use. Wet etching of III-V materials is primarily to be done in 'Fume hood 07: III-V acids/bases'. Contact information, risk assessment and manual regarding this fume hood can be found in LabManager: | ||
[http://labmanager | [http://labmanager.dtu.dk/function.php?module=Machine&view=view&mach=374 Fume hood 07 Info page in LabManager] | ||
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It is very important that you dispose off chemicals and process waste according to DTU | It is very important that you dispose off chemicals and process waste according to DTU Nanolab regulations and risk assessments for your work. | ||
[[Image:FH07.jpg|300x300px|right|thumb|'Fume hood 07' in cleanroom D3]] | [[Image:FH07.jpg|300x300px|right|thumb|'Fume hood 07' in cleanroom D3]] | ||
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! width="20%" |PQ(1.1) | ! width="20%" |PQ(1.1) | ||
! width="20%" |InGaAs | ! width="20%" |InGaAs | ||
! width="20%" | | ! width="20%" |Contributor | ||
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H<sub>2</sub>SO<sub>4</sub>(10%):H<sub>2</sub>O<sub>2</sub>(30%):H<sub>2</sub>O is a selective etch of InGaAsP with very low etch rate in InP. '''The acronym PQ(1.n) denotes a lattice-matched InGaAsP on InP with a band gap corresponding to a wavelength of 1.n um.''' | H<sub>2</sub>SO<sub>4</sub>(10%):H<sub>2</sub>O<sub>2</sub>(30%):H<sub>2</sub>O is a selective etch of InGaAsP with very low etch rate in InP. '''The acronym PQ(1.n) denotes a lattice-matched InGaAsP on InP with a band gap corresponding to a wavelength of 1.n um.''' | ||
The | The etch rates have not yet been calibrated at DTU Danchip. | ||
The temperature is 22 degC +/- 1 degC. | The temperature is 22 degC +/- 1 degC. | ||
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'''(1)''' The | '''(1)''' The etch rates have not yet been calibrated at DTU Nanolab. | ||
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'''(1)''' Ti from Titest.prg on Physimeca. It seems there is no measurable | '''(1)''' Ti from Titest.prg on Physimeca. It seems there is no measurable etching during first 10 seconds.'''(2)''' Process '''SiO2ky2''' in PECVD2 (2014-July Luisa Ottaviamo @photonics ). '''(3)''' Process '''STANDARD''' in PECVD2 (2014-July Luisa Ottaviano @ photonics). '''(4)''' Process '''SINSTD''' in PECVD2 (2014-July Luisa Ottaviano @ photonics). '''(5)''' Appl. Phys. Lett. vol. 51, 2222 (1987). | ||
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