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Specific Process Knowledge/Thermal Process/Annealing: Difference between revisions

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DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers
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Pevo (talk | contribs)
DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers
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|-style="background:WhiteSmoke; color:black"
|-style="background:WhiteSmoke; color:black"
!General description
!General description
|Annealing of 4" and 6" wafers. Annealing of wafers from the LPCVD furnaces and PECVD2.  
|Annealing of 4" and 6" wafers. Annealing of wafers from the LPCVD furnaces and from PECVD4.  
|Annealing of wafers from EVG-NIL and PECVD3.
|Annealing of wafers from Wafer Bonder 02 and from and PECVD4 and PECVD3.
|Annealing of wafers with Al.
|Annealing of wafers with Al and ALD deposited AL2O3 and TiO2.
|Annealing of almost all materials on silicon wafers.
|Annealing of almost all materials on silicon wafers.
|Rapid thermal annealing
|Rapid thermal annealing
Retrieved from "https://labadviser.nanolab.dtu.dk//index.php?title=Specific_Process_Knowledge/Thermal_Process/Annealing"