Specific Process Knowledge/Thermal Process/Oxidation: Difference between revisions
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==Oxidation== | ==Oxidation== | ||
At Danchip we have | At Danchip we have seven furnaces for thermal oxidation of silicon samples: Boron Drive-in + Pre-dep furnace (A1), Gate Oxide furnace (A2). Phosphorous Drive-in furnace (A3), Anneal-oxide furnace (C1), Anneal-Bond furnace (C3), Al-Anneal furnace (C3), APOX furnace (D1), Noble furnace and Multipurpose Annealing furnace. | ||
Thermal oxidation can take place either by a dry process or a wet process, depending on what furnace that is used for the oxidation. The film quality for a dry oxide is better than the film quality for a wet oxide with regards to density and dielectric constant. However, the oxidation rate is slow for a dry oxide. | |||
*Dry oxidation is used for 5 nm - 200 nm of oxide and can be grown in the furnaces: A1, A2, A3, C1, C3, Multipurpose Annealing | *Dry oxidation is used for 5 nm - 200 nm of oxide and can be grown in the furnaces: A1, A2, A3, C1, C3, C4, Noble furnace, Multipurpose Annealing | ||
*Wet oxidation is used for up to 4 µm of oxide and can be grown in the furnaces: A1, A3, D1. | *Wet oxidation is used for up to 4 µm of oxide and can be grown in the furnaces: A1, A3, D1. | ||
*Very thick oxide layers >4 µm can be grown in D1 by a wet oxidation (only performed by Danchip). | *Very thick oxide layers >4 µm can be grown in D1 by a wet oxidation (only performed by Danchip). | ||