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Specific Process Knowledge/Etch/Etching of Aluminium: Difference between revisions

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DCH-Employees-701, NLAB-Employees-701, danchip
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Choi (talk | contribs)
DCH-Employees-701, NLAB-Employees-701, danchip
641 edits
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|-style="background:WhiteSmoke; color:black"
|-style="background:WhiteSmoke; color:black"
!Generel description
!Generel description
|Wet etch of pure Al
|Wet etch of Al
|Wet etch/removal: TMAH<br>
|Wet etch/removal: TMAH<br>
Mainly used for removing Al on e-beam resist after e-beam exposure, see process flow [[Specific_Process_Knowledge/Lithography/EBeamLithography#Aluminum_coating| here]]
Mainly used for removing Al on e-beam resist after e-beam exposure, see process flow [[Specific_Process_Knowledge/Lithography/EBeamLithography#Aluminum_coating| here]]
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!Etch rate range
!Etch rate range
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|
*~100nm/min (pure Al)
*~60-100nm/min
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*~0.5nm/min (pure Al)
*~0.5nm/min (pure Al)
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!Substrate size
!Substrate size
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*<nowiki>#</nowiki>1-25 100 mm wafers
*100 mm wafers (in bath)
*<nowiki>#</nowiki>1-25 150 mm wafers
*150 mm wafers (in bath)
*Any size (in beaker)
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|
*Chips (6-60 mm)  
*Chips (6-60 mm)  
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