Specific Process Knowledge/Thin film deposition/Furnace LPCVD Nitride: Difference between revisions
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==LPCVD (Low Pressure Chemical Vapor Deposition) Silicon Nitride== | ==LPCVD (Low Pressure Chemical Vapor Deposition) Silicon Nitride== | ||
[[image:Furnace_nitride1.jpg|300x300px|right|thumb|B2 Furnace LPCVD Nitride: positioned in cleanroom 2]] | [[image:Furnace_nitride1.jpg|300x300px|right|thumb|B2 Furnace LPCVD Nitride: positioned in cleanroom 2]] | ||
At | At Danchip there are two LPCVD nitride furnaces for deposition of silicon nitride: A new furnace for deposition of stoichiometric nitride on 4" or 6" wafers and a older furnace for deposition of stoichiometric nitride and low stress nitride on 4" wafers. Both furnaces are Tempress horizontal furnaces. | ||
The LPCVD silicon nitride deposition is a batch process, meaning that you can run a batch of up to 25-35 wafers at a time. The deposition takes place at temperatures of 780-835 degrees Celsius. The reactive gases are ammonia (NH<sub>3</sub>) and dichlorsilane (SiH<sub>2</sub>Cl<sub>2</sub>). The LPCVD nitride has a good step coverage, and the film thickness is very uniform over the wafers. On the old nitride furnace we have two standard silicon nitride processes: One for deposition of stoichiometric nitride (Si<sub>3</sub>N<sub>4</sub>) and one for deposition of low stress nitride (SNR). On the new nitride furnace we have two standard recipes for deposition of stoichiometric nitride: One for 4" wafers and one for 6" wafers. | |||
To get information on how to operate the furnace please read the user manuals which are uploaded to LabManager on the machine page. | |||
==Process Knowledge== | ==Process Knowledge== | ||