Specific Process Knowledge/Thin film deposition/Furnace LPCVD Nitride: Difference between revisions
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!style="background:silver; color:black" align="left" valign="top" rowspan="3"|Performance | !style="background:silver; color:black" align="left" valign="top" rowspan="3"|Performance | ||
|style="background:LightGrey; color:black"|Film thickness | |style="background:LightGrey; color:black"|Film thickness | ||
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*Si<sub>3</sub>N<sub>4</sub>:~50Å - ~3000Å | *Si<sub>3</sub>N<sub>4</sub>:~50Å - ~3000Å | ||