Specific Process Knowledge/Thin film deposition: Difference between revisions
New page: == Choose material to be deposit == === Metals === *Aluminium *Gold *Titanium *Nickel === Dielectric materials === *Silicon oxide *Silicon nitride === Other materials === *PolySilico... |
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| Line 7: | Line 7: | ||
*Nickel | *Nickel | ||
=== | === Polymers === | ||
*SU8 | |||
=== Other materials === | |||
*PolySilicon | |||
*Silicon oxide | *Silicon oxide | ||
*Silicon nitride | *Silicon nitride | ||
*PolySilicon | == Choose deposition equipment == | ||
*Alcatel - ''E-beam evaporator and sputter tool'' | |||
*Leybold - ''E-beam evaporator and multiple wafer tool'' | |||
*Wordentec - ''Metal evaporator and ?'' | |||
*PECVD - ''Plasma Enhanced Chemical Vapor deposition'' | |||
*B2 Furnace LPCVD Nitride - ''Deposition of silicon nitrid'' | |||
*B3 Furnace LPCVD TEOS - ''Deposition of silicon oxide'' | |||
*B4 Furnace LPCVD PolySilicon - ''Deposition of polysilicon'' | |||
*MVD - ''Molecular Vapor Deposition'' | |||
Revision as of 09:59, 19 September 2007
Choose material to be deposit
Metals
- Aluminium
- Gold
- Titanium
- Nickel
Polymers
- SU8
Other materials
- PolySilicon
- Silicon oxide
- Silicon nitride
Choose deposition equipment
- Alcatel - E-beam evaporator and sputter tool
- Leybold - E-beam evaporator and multiple wafer tool
- Wordentec - Metal evaporator and ?
- PECVD - Plasma Enhanced Chemical Vapor deposition
- B2 Furnace LPCVD Nitride - Deposition of silicon nitrid
- B3 Furnace LPCVD TEOS - Deposition of silicon oxide
- B4 Furnace LPCVD PolySilicon - Deposition of polysilicon
- MVD - Molecular Vapor Deposition