Specific Process Knowledge/Etch/Aluminum Oxide: Difference between revisions
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Etching Al2O3 can be done both chemically and by dry etching. We have not tested a chemical etch but a possibility could be to use a developer. This will be selective to most materials not containing Al. Do expect a slow and isotropic etch rate of about 1-2 nm/min. We have done some test of Al2O3 in dry etching. It has been mostly tested in the III-V ICP. Please see links below. | Etching Al2O3 can be done both chemically and by dry etching. We have not tested a chemical etch but a possibility could be to use a developer. This will be selective to most materials not containing Al. Do expect a slow and isotropic etch rate of about 1-2 nm/min. We have done some test of Al2O3 in dry etching. It has been mostly tested in the III-V ICP. Please see links below. | ||
*[[/Al2O3 Etch with ICP Metal|Al2O3 etch using ICP metal]] | *[[/Al2O3 Etch with ICP Metal|Al2O3 etch using ICP metal]] | ||
*[[/Al2O3 Etch with III-V ICP|Al2O3 etch using III-V ICP]] | *[[/Al2O3 Etch with III-V ICP|Al2O3 etch using III-V ICP]] | ||
Revision as of 10:55, 29 June 2017
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Etching Al2O3 can be done both chemically and by dry etching. We have not tested a chemical etch but a possibility could be to use a developer. This will be selective to most materials not containing Al. Do expect a slow and isotropic etch rate of about 1-2 nm/min. We have done some test of Al2O3 in dry etching. It has been mostly tested in the III-V ICP. Please see links below.