Specific Process Knowledge/Etch/IBE⁄IBSD Ionfab 300/IBE blazed gratings: Difference between revisions

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'''Feedback to this page''': '''[mailto:labadviser@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Etch/IBE⁄IBSD_Ionfab_300/IBE_blazed_gratings click here]'''  
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*60nm Barc
*360nm KRF resist


''by bge@danchip'' experiments made in June/July 2012
''by bge@danchip'' experiments made in June/July 2012

Revision as of 12:43, 12 April 2019

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  • 60nm Barc
  • 360nm KRF resist

by bge@danchip experiments made in June/July 2012

  • Some examples of blazed gratingens in fused silica etched with Cr and DUV resist as masking layer
  • 30min etch with 100nm Cr mask, used recipe BGHE blazed gratings with CHF3 *Rotation speed 0 rpm *Angle: -35 *I(N)=400mA *RF power=1300W *I(B)=300mA *V(B)=300V *V(AC,B)=500V *Ar(N) flow=5sccm *Ar(B) flow=5sccm *CHF3 flow=15sccm
    30min etch with 100nm Cr mask, used recipe BGHE blazed gratings with CHF3
    *Rotation speed 0 rpm
    *Angle: -35
    *I(N)=400mA
    *RF power=1300W
    *I(B)=300mA
    *V(B)=300V
    *V(AC,B)=500V
    *Ar(N) flow=5sccm
    *Ar(B) flow=5sccm
    *CHF3 flow=15sccm
  • 45min etch with 100nm Cr mask, used recipe BGHE blazed gratings with CHF3 *Rotation speed 0 rpm *Angle: -35 *I(N)=400mA *RF power=1300W *I(B)=300mA *V(B)=300V *V(AC,B)=500V *Ar(N) flow=5sccm *Ar(B) flow=5sccm *CHF3 flow=15sccm
    45min etch with 100nm Cr mask, used recipe BGHE blazed gratings with CHF3
    *Rotation speed 0 rpm
    *Angle: -35
    *I(N)=400mA
    *RF power=1300W
    *I(B)=300mA
    *V(B)=300V
    *V(AC,B)=500V
    *Ar(N) flow=5sccm
    *Ar(B) flow=5sccm
    *CHF3 flow=15sccm
  • 20min etch with Krf resist, all resist is gone, used recipe BGHE blazed gratings *Rotation speed 0 rpm *Angle: -35 *I(N)=550mA *RF power=1300W *I(B)=500mA *V(B)=600V *V(AC,B)=400V *Ar(N) flow=5sccm *Ar(B) flow=10sccm *CHF3 flow=0sccm
    20min etch with Krf resist, all resist is gone, used recipe BGHE blazed gratings
    *Rotation speed 0 rpm
    *Angle: -35
    *I(N)=550mA
    *RF power=1300W
    *I(B)=500mA
    *V(B)=600V
    *V(AC,B)=400V
    *Ar(N) flow=5sccm
    *Ar(B) flow=10sccm
    *CHF3 flow=0sccm
  • 15+30min etch with 50nm Cr mask, used recipe BGHE blazed gratings with CHF3 *Rotation speed 0 rpm *Angle: -35 *I(N)=400mA *RF power=1300W *I(B)=300mA *V(B)=300V *V(AC,B)=500V *Ar(N) flow=5sccm *Ar(B) flow=5sccm *CHF3 flow=15sccm
    15+30min etch with 50nm Cr mask, used recipe BGHE blazed gratings with CHF3
    *Rotation speed 0 rpm
    *Angle: -35
    *I(N)=400mA
    *RF power=1300W
    *I(B)=300mA
    *V(B)=300V
    *V(AC,B)=500V
    *Ar(N) flow=5sccm
    *Ar(B) flow=5sccm
    *CHF3 flow=15sccm
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