Specific Process Knowledge/Etch/Aluminum Oxide: Difference between revisions

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'''Feedback to this page''': '''[mailto:labadviser@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Etch/Aluminum_Oxide click here]'''
'''Feedback to this page''': '''[mailto:labadviser@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Etch/Aluminum_Oxide click here]'''


 
Etching Al2O3 can be done both chemically and by dry etching. We have not tested a chemical etch but a possibility could be to use a developer. This will be selective to most materials not containing Al. Do expect a slow and isotropic etch rate of about 1-2 nm/min. We have done some test of Al2O3 in dry etching. It has been mostly tested in the III-V ICP. Please see links below.
=<span style="background:#FF2800">THIS PAGE IS UNDER CONSTRUCTION</span>[[image:Under_construction.png|200px]]=
=<span style="background:#FF2800">THIS PAGE IS UNDER CONSTRUCTION</span>[[image:Under_construction.png|200px]]=


{|border="1" cellspacing="1" cellpadding="3" style="text-align:left;"
|-
|-
|-style="background:silver; color:black"
!
![[Specific Process Knowledge/Thin film deposition/Furnace LPCVD Nitride|Method 1]]
![[Specific Process Knowledge/Thin film deposition/PECVD|Method 2]]
|-
|-
|-style="background:WhiteSmoke; color:black"
!Generel description
|Generel description - method 1
|Generel description - method 2
|-
|-
|-style="background:LightGrey; color:black"
!Parameter 1
|
*A
*B
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*A
*B
|-
|-
|-style="background:WhiteSmoke; color:black"
!Parameter 2
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*A
*B
*C
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*A
|-
|-
|-style="background:LightGrey; color:black"
!Substrate size
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*<nowiki>#</nowiki> small samples
*<nowiki>#</nowiki> 50 mm wafers
*<nowiki>#</nowiki> 100 mm wafers
*<nowiki>#</nowiki> 150 mm wafers
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*<nowiki>#</nowiki> small samples
*<nowiki>#</nowiki> 50 mm wafers
*<nowiki>#</nowiki> 100 mm wafers
*<nowiki>#</nowiki> 150 mm wafers
|-
|-
|-style="background:WhiteSmoke; color:black"
!'''Allowed materials'''
|
*Allowed material 1
*Allowed material 2
|
*Allowed material 1
*Allowed material 2
*Allowed material 3
|-
|}
<br clear="all" />




*[[/Al2O3 Etch with ICP Metal|Al2O3 etch using ICP metal]]
*[[/Al2O3 Etch with ICP Metal|Al2O3 etch using ICP metal]]
*[[/Al2O3 Etch with III-V ICP|Al2O3 etch using III-V ICP]]
*[[/Al2O3 Etch with III-V ICP|Al2O3 etch using III-V ICP]]

Revision as of 11:54, 29 June 2017

Feedback to this page: click here

Etching Al2O3 can be done both chemically and by dry etching. We have not tested a chemical etch but a possibility could be to use a developer. This will be selective to most materials not containing Al. Do expect a slow and isotropic etch rate of about 1-2 nm/min. We have done some test of Al2O3 in dry etching. It has been mostly tested in the III-V ICP. Please see links below.

THIS PAGE IS UNDER CONSTRUCTION

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