Specific Process Knowledge/Thermal Process/Furnace: Multipurpose annealing: Difference between revisions
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|style="background:LightGrey; color:black"|Film thickness | |style="background:LightGrey; color:black"|Film thickness | ||
|style="background:WhiteSmoke; color:black"| | |style="background:WhiteSmoke; color:black"| | ||
*Dry oxidation: 50 Å to ~200 nm SiO<sub>2</sub> (it takes too long to grow a thicker layer) | *Dry oxidation: 50 Å to ~200 nm SiO<sub>2</sub> (it takes too long to grow a thicker oxide layer) | ||
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!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Process parameter range | !style="background:silver; color:black" align="center" valign="center" rowspan="3"|Process parameter range | ||
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*1-30 50 mm, 100 mm or 150 mm wafers per run | *1-30 50 mm, 100 mm or 150 mm wafers per run | ||
*1-50 200 mm wafers per run (not possible with all quartz sets) | *1-50 200 mm wafers per run (not possible with all quartz sets) | ||
*Smaller samples (placed | *Smaller samples (placed on Si carrier wafers) | ||
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|style="background:LightGrey; color:black"|Substrate materials allowed | |style="background:LightGrey; color:black"|Substrate materials allowed | ||