Specific Process Knowledge/Thin film deposition/Deposition of Silicon Nitride: Difference between revisions
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*[[Specific Process Knowledge/Thin film deposition/Furnace LPCVD Nitride/Deposition of stoichiometric nitride using the 4" LPCVD nitride furnace|Deposition of stoichimetric nitride using the 4" LPCVD nitride furnace]] | *[[Specific Process Knowledge/Thin film deposition/Furnace LPCVD Nitride/Deposition of stoichiometric nitride using the 4" LPCVD nitride furnace|Deposition of stoichimetric nitride using the 4" LPCVD nitride furnace]] | ||
*[[Specific Process Knowledge/Thin film deposition/Furnace LPCVD Nitride/Deposition of low stress nitride using the 6" LPCVD nitride furnace|Deposition of low stress | *[[Specific Process Knowledge/Thin film deposition/Furnace LPCVD Nitride/Deposition of low stress nitride using the 6" LPCVD nitride furnace|Deposition of silicon rich (low stress) nitride using the 6" LPCVD nitride furnace]] | ||
*[[/Deposition of Silicon Nitride using PECVD|Nitride deposition using PECVD]] (''or oxynitride'') | *[[/Deposition of Silicon Nitride using PECVD|Nitride deposition using PECVD]] (''or oxynitride'') | ||