Specific Process Knowledge/Thin film deposition/ALD Picosun R200: Difference between revisions
| Line 62: | Line 62: | ||
*Al<sub>2</sub>O<sub>3</sub>: ~ 0.075 - 0.097 nm/cycle (Using the "Al2O3" recipe, depending on the temperature) | *Al<sub>2</sub>O<sub>3</sub>: ~ 0.075 - 0.097 nm/cycle (Using the "Al2O3" recipe, depending on the temperature) | ||
*TiO<sub>2</sub>: 0.041 - 0.061 nm/cycle (Using the "TiO2" recipe, depending on the temperature) | *TiO<sub>2</sub>: 0.041 - 0.061 nm/cycle (Using the "TiO2" recipe, depending on the temperature) | ||
*ZnO: 0.11-0.18 nm/cycle (Using ZnOT recipe, depending on temperature) | *ZnO: 0.11 - 0.18 nm/cycle (Using ZnOT recipe, depending on temperature) | ||
*HfO<sub>2</sub>: 0.827 nm/cycle | *HfO<sub>2</sub>: 0.827 nm/cycle | ||
|- | |- | ||
| Line 70: | Line 70: | ||
*TiO<sub>2</sub>: 0 - 100 nm | *TiO<sub>2</sub>: 0 - 100 nm | ||
*ZnO: 0 - 100 nm | *ZnO: 0 - 100 nm | ||
*HfO<sub>2</sub>: | *HfO<sub>2</sub>: 0 - 50 nm | ||
|- | |- | ||
!style="background:silver; color:black" align="center" valign="center" rowspan="2"|Process parameter range | !style="background:silver; color:black" align="center" valign="center" rowspan="2"|Process parameter range | ||