Specific Process Knowledge/Thin film deposition/Deposition of Hafnium Oxide: Difference between revisions

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!Process Temperature
!Process Temperature
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* 250<sup>o</sup>C
* 150 - 300<sup>o</sup>C
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|-style="background:LightGrey; color:black"

Revision as of 13:28, 23 June 2017

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Deposition of Hafnium Oxide

Thin films of hafnium oxide can only be deposited in the ALD at the moment. More information about the process can be found here.

Only method at the moment for the deposition of hafnium oxide

ALD
Generel description
  • Atomic Layer Deposition
Stoichiometry
  • HfO2
Film Thickness
  • 0nm - 50nm
Deposition rate
  • 0.0827 nm/cycle on a flat sample
  • 0.954-0.122 nm/cycle on a high aspect ratio structures
Step coverage
  • Very good
Process Temperature
  • 150 - 300oC
Substrate size
  • Several small samples
  • 1-5 50 mm wafers
  • 1-5 100 mm wafers
  • 1-5 150 mm wafer
Allowed materials
  • Silicon
  • Silicon oxide, silicon nitride
  • Quartz/fused silica
  • Al, Al2O3
  • Ti, TiO2
  • Other metals (use dedicated carrier wafer)
  • III-V materials (use dedicated carrier wafer)
  • Polymers (depending on the melting point/deposition temperature, use carrier wafer)
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