Specific Process Knowledge/Thin film deposition/PECVD: Difference between revisions
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== | ==Overview of the performance of PECVD thin films and some process related parameters== | ||
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!style="background:silver; color:black;" align="left"|Purpose | !style="background:silver; color:black;" align="left"|Purpose | ||
|style="background:LightGrey; color:black"|Deposition of dielectrica | |style="background:LightGrey; color:black"|Deposition of dielectrica | ||
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*Silicon oxide | *Silicon oxide | ||
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!style="background:silver; color:black" align="left"|Performance | !style="background:silver; color:black" align="left"|Performance | ||
|style="background:LightGrey; color:black"|Film thickness | |style="background:LightGrey; color:black"|Film thickness | ||
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*~10nm - 30µm | *~10nm - 30µm | ||
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|style="background:LightGrey; color:black"|Index of refraction | |||
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*~1.4-2.1 | *~1.4-2.1 | ||
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|style="background:LightGrey; color:black"|Step coverage | |||
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*In general: Not so good | *In general: Not so good | ||
*PBSG: Floats at 1000<sup>o</sup>C | *PBSG: Floats at 1000<sup>o</sup>C | ||
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|style="background:LightGrey; color:black"|Film quality | |||
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*Not so dense film | *Not so dense film | ||
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*300 <sup>o</sup>C | *300 <sup>o</sup>C | ||
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|style="background:LightGrey; color:black"|Process pressure | |||
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*~200-900 mTorr | *~200-900 mTorr | ||
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|style="background:LightGrey; color:black"|Gas flows | |||
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*SiH<math>_4</math>:0-60 sccm | *SiH<math>_4</math>:0-60 sccm | ||
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*Deposition on one side of the substrate | *Deposition on one side of the substrate | ||
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| style="background:LightGrey; color:black"|Substrate material allowed | |||
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*Silicon wafers | *Silicon wafers | ||
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*Quartz wafers | *Quartz wafers | ||
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|style="background:silver; color:black"| | |style="background:silver; color:black"| | ||
| style="background:LightGrey; color:black"|Material allowed on the substrate | |||
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*Aluminium | *Aluminium | ||