Specific Process Knowledge/Etch/ICP Metal Etcher/silicon oxide/By BGHE: Difference between revisions
| Line 58: | Line 58: | ||
|<!--'''Selectivity (resist:SiO2)'''--> | |<!--'''Selectivity (resist:SiO2)'''--> | ||
~1:2 (Si3N4) | ~1:2 (Si3N4) | ||
|<!--'''Etch rate in Si'''--> | |||
? | |||
|- | |||
|-style="background:white; color:black" | |||
|s007785 | |||
|<!-- '''Mask material''' --> 880nm KRF | |||
|<!-- '''Barc etch''' -->pxbarcO2 25s | |||
|<!-- '''Coil power''' --> 800W | |||
|<!--'''Platen power'''--> 200W | |||
|<!--'''Pressure'''--> 2.5mTorr | |||
|<!--'''Flow rate C4F8'''--> 13sccm | |||
|<!--'''Flow rate H2'''--> 26sccm | |||
|<!--'''Flow rate Ar'''-->0 | |||
|<!--'''T'''--> 0 | |||
|<!--'''Process time'''--> 7 min | |||
|width="200"|<!--'''Comment'''--> | |||
|width="200"|<!--'''Results'''--> | |||
[[File:s008684_Si3N4_19.jpg|100px|frameless]] [[File:s008684_Si3N4_20.jpg|100px|frameless]] | |||
|<!--'''CD change (mask 55% trench) after s007467 is it <50% after barc etch'''<br> | |||
trench opening as a fraction of pitch--> | |||
37% (1µm pitch)<br> | |||
48% (4µm pitch)<br> | |||
|<!--'''Profile angles'''--> | |||
83-86 | |||
|<!--'''Etch depth in SiO2'''--> | |||
>1000 nm | |||
|<!--'''Etch rate'''--> | |||
>143nm/mi | |||
|<!--'''Etch depth in resist'''--> | |||
250nm | |||
|<!--'''Selectivity (resist:SiO2)'''--> | |||
>1:4 | |||
|<!--'''Etch rate in Si'''--> | |<!--'''Etch rate in Si'''--> | ||
? | ? | ||