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Specific Process Knowledge/Etch/ICP Metal Etcher/silicon oxide/By BGHE: Difference between revisions

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! width="20"| '''T'''
! width="20"| '''T'''
! '''Process time'''
! '''Process time'''
! '''Comment'''
! width="400"| '''Comment'''
! width="400"|'''Results'''
! width="400"|'''Results'''
! width="400"|'''CD change (mask 55% trench) after s007467 is it <50% after barc etch'''<br>
! width="400"|'''CD change (mask 55% trench) after s007467 is it <50% after barc etch'''<br>
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|<!--'''T'''--> 0
|<!--'''T'''--> 0
|<!--'''Process time'''--> 1:30min
|<!--'''Process time'''--> 1:30min
|<!--'''Comment'''--> The layer in this case is 300nm Si3N4
|width="400"|<!--'''Comment'''--> The layer in this case is 300nm Si3N4
|<!--'''Results'''-->
|width="400"|<!--'''Results'''-->
[[File:s008684_Si3N4_19.jpg|100px|frameless]] [[File:s008684_Si3N4_20.jpg|100px|frameless]]
[[File:s008684_Si3N4_19.jpg|100px|frameless]] [[File:s008684_Si3N4_20.jpg|100px|frameless]]
|<!--'''CD change (mask 55% trench) after s007467 is it <50% after barc etch'''<br>
|<!--'''CD change (mask 55% trench) after s007467 is it <50% after barc etch'''<br>
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|<!--'''T'''--> 0
|<!--'''T'''--> 0
|<!--'''Process time'''--> 10min
|<!--'''Process time'''--> 10min
|<!--'''Comment'''-->  
|width="400"|<!--'''Comment'''-->  
|<!--'''Results'''-->
|width="400"|<!--'''Results'''-->
[[File:ICP metal s007467_07.jpg|100px|frameless]] [[File:ICP metal s007467_09.jpg|100px|frameless]]
[[File:ICP metal s007467_07.jpg|100px|frameless]] [[File:ICP metal s007467_09.jpg|100px|frameless]]
|<!--'''CD change (mask 55% trench) after s007467 is it <50% after barc etch'''<br>
|<!--'''CD change (mask 55% trench) after s007467 is it <50% after barc etch'''<br>
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|<!--'''T'''--> 0
|<!--'''T'''--> 0
|<!--'''Process time'''--> 5min
|<!--'''Process time'''--> 5min
|<!--'''Comment'''-->  
|width="400"|<!--'''Comment'''-->  
|<!--'''Results'''-->
|width="400"|<!--'''Results'''-->
[[File:ICP metal s007418_09.jpg|100px|frameless]] [[File:ICP metal s007418_12.jpg|100px|frameless]]
[[File:ICP metal s007418_09.jpg|100px|frameless]] [[File:ICP metal s007418_12.jpg|100px|frameless]]
|<!--'''CD change (mask 55% trench) after s007467 is it <50% after barc etch'''<br>
|<!--'''CD change (mask 55% trench) after s007467 is it <50% after barc etch'''<br>
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|<!--'''T'''--> 0
|<!--'''T'''--> 0
|<!--'''Process time'''--> 8min
|<!--'''Process time'''--> 8min
|<!--'''Comment'''--> repeated s007416 and s007468 with a barc etch step. This improved the uniformity of the etch performance over different linewidth and improved the selectivity to the mask and the profile angle. After this I continued with barc etch. '''Nice'''
|width="400"|<!--'''Comment'''--> repeated s007416 and s007468 with a barc etch step. This improved the uniformity of the etch performance over different linewidth and improved the selectivity to the mask and the profile angle. After this I continued with barc etch. '''Nice'''
|<!--'''Results'''-->
|width="400"|<!--'''Results'''-->
[[File:ICP metal s007565_02.jpg|100px|frameless]] [[File:ICP metal s007565_06.jpg|100px|frameless]]
[[File:ICP metal s007565_02.jpg|100px|frameless]] [[File:ICP metal s007565_06.jpg|100px|frameless]]
|<!--'''CD change (mask 55% trench) after s007467 is it <50% after barc etch'''<br>
|<!--'''CD change (mask 55% trench) after s007467 is it <50% after barc etch'''<br>
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|<!--'''T'''--> 0
|<!--'''T'''--> 0
|<!--'''Process time'''--> 10min
|<!--'''Process time'''--> 10min
|<!--'''Comment'''--> Repeated s007416 with double time.  
|width="400"|<!--'''Comment'''--> Repeated s007416 with double time.  
|<!--'''Results'''-->
|width="400"|<!--'''Results'''-->
[[File:ICP metal s007468_12.jpg|100px|frameless]] [[File:ICP metal s007468_15.jpg|100px|frameless]]
[[File:ICP metal s007468_12.jpg|100px|frameless]] [[File:ICP metal s007468_15.jpg|100px|frameless]]
|<!--'''CD change (mask 55% trench) after s007467 is it <50% after barc etch'''<br>
|<!--'''CD change (mask 55% trench) after s007467 is it <50% after barc etch'''<br>
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|<!--'''T'''--> 0
|<!--'''T'''--> 0
|<!--'''Process time'''--> 5min
|<!--'''Process time'''--> 5min
|<!--'''Comment'''--> From S007411 the platen power was decreased to avoid trenching. The etch rate went down and some variation in profile angle is seen from small opening to large opening. Started plasma on the 4th try
|width="400"|<!--'''Comment'''--> From S007411 the platen power was decreased to avoid trenching. The etch rate went down and some variation in profile angle is seen from small opening to large opening. Started plasma on the 4th try
|<!--'''Results'''-->
|width="400"|<!--'''Results'''-->
[[File:ICP metal s007416_05.jpg|100px|frameless]] [[File:ICP metal s007416_06.jpg|100px|frameless]]
[[File:ICP metal s007416_05.jpg|100px|frameless]] [[File:ICP metal s007416_06.jpg|100px|frameless]]
|<!--'''CD change (mask 55% trench) after s007467 is it <50% after barc etch'''<br>
|<!--'''CD change (mask 55% trench) after s007467 is it <50% after barc etch'''<br>
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|<!--'''T'''--> 0
|<!--'''T'''--> 0
|<!--'''Process time'''--> 5min
|<!--'''Process time'''--> 5min
|<!--'''Comment'''--> From s007409 the Gas flow ratio between C4F8 and H2 has been changed to more C4F8 and less H2. This increased the etch rate (more fluorine). Trenching is seen and tappered sidewall is seen indicating a more physical etch.
|width="400"|<!--'''Comment'''--> From s007409 the Gas flow ratio between C4F8 and H2 has been changed to more C4F8 and less H2. This increased the etch rate (more fluorine). Trenching is seen and tappered sidewall is seen indicating a more physical etch.
|<!--'''Results'''-->
|width="400"|<!--'''Results'''-->
[[File:ICP metal s007411_01.jpg|100px|frameless]] [[File:ICP metal s007411_02.jpg|100px|frameless]]
[[File:ICP metal s007411_01.jpg|100px|frameless]] [[File:ICP metal s007411_02.jpg|100px|frameless]]
|<!--'''CD change (mask 55% trench) after s007467 is it <50% after barc etch'''<br>
|<!--'''CD change (mask 55% trench) after s007467 is it <50% after barc etch'''<br>
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|<!--'''T'''--> 0
|<!--'''T'''--> 0
|<!--'''Process time'''--> 5min
|<!--'''Process time'''--> 5min
|<!--'''Comment'''--> Increased the platen power. The selectivity and profile looks good but the resist profile has been rounded more on the edge and this will effect the profile for a deeper etch.
|width="400"|<!--'''Comment'''--> Increased the platen power. The selectivity and profile looks good but the resist profile has been rounded more on the edge and this will effect the profile for a deeper etch.
|<!--'''Results'''-->
|width="400"|<!--'''Results'''-->
[[File:ICP metal s007419_17.jpg|100px|frameless]] [[File:ICP metal s007419_21.jpg|100px|frameless]]
[[File:ICP metal s007419_17.jpg|100px|frameless]] [[File:ICP metal s007419_21.jpg|100px|frameless]]
|<!--'''CD change (mask 55% trench) after s007467 is it <50% after barc etch'''<br>
|<!--'''CD change (mask 55% trench) after s007467 is it <50% after barc etch'''<br>
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|<!--'''T'''--> 0
|<!--'''T'''--> 0
|<!--'''Process time'''--> 7min
|<!--'''Process time'''--> 7min
|<!--'''Comment'''--> Reduced the platen power.Effect: ARDE - less CD increase but more possitive tappered profile.
|width="400"|<!--'''Comment'''--> Reduced the platen power.Effect: ARDE - less CD increase but more possitive tappered profile.
|<!--'''Results'''-->
|width="400"|<!--'''Results'''-->
[[File:ICP metal s007410_05.jpg|100px|frameless]] [[File:ICP metal s007410_09.jpg|100px|frameless]]
[[File:ICP metal s007410_05.jpg|100px|frameless]] [[File:ICP metal s007410_09.jpg|100px|frameless]]
|<!--'''CD change (mask 55% trench) after s007467 is it <50% after barc etch'''<br>
|<!--'''CD change (mask 55% trench) after s007467 is it <50% after barc etch'''<br>
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|<!--'''T'''--> 0
|<!--'''T'''--> 0
|<!--'''Process time'''--> 10min
|<!--'''Process time'''--> 10min
|<!--'''Comment'''--> Tried with C4F8/Ar instead of C4F8/H2 => much lower etch rate and bad selectivity to the resist.
|width="400"|<!--'''Comment'''--> Tried with C4F8/Ar instead of C4F8/H2 => much lower etch rate and bad selectivity to the resist.
|<!--'''Results'''-->
|width="400"|<!--'''Results'''-->
[[File:ICP metal s006656 no1.jpg|100px|frameless]] [[File:ICP metal s006656 no2.jpg|100px|frameless]]
[[File:ICP metal s006656 no1.jpg|100px|frameless]] [[File:ICP metal s006656 no2.jpg|100px|frameless]]
|<!--'''CD change (mask 55% trench) after s007467 is it <50% after barc etch'''<br>
|<!--'''CD change (mask 55% trench) after s007467 is it <50% after barc etch'''<br>
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|<!--'''T'''--> 0
|<!--'''T'''--> 0
|<!--'''Process time'''--> 5min
|<!--'''Process time'''--> 5min
|<!--'''Comment'''--> Repeated Pexiongs recipe without barc etch and only 5 min's runs. It probably takes about 1 min to get through the barc. If you count that in then the etch rate and relectivity to resist is almost the same as for the first run. Effect: CD increase
|width="400"|<!--'''Comment'''--> Repeated Pexiongs recipe without barc etch and only 5 min's runs. It probably takes about 1 min to get through the barc. If you count that in then the etch rate and relectivity to resist is almost the same as for the first run. Effect: CD increase
|<!--'''Results'''-->
|width="400"|<!--'''Results'''-->
[[File:ICP metal s007409_06.jpg|100px|frameless]] [[File:ICP metal s007409_07.jpg|100px|frameless]]
[[File:ICP metal s007409_06.jpg|100px|frameless]] [[File:ICP metal s007409_07.jpg|100px|frameless]]
|<!--'''CD change (mask 55% trench) after s007467 is it <50% after barc etch'''<br>
|<!--'''CD change (mask 55% trench) after s007467 is it <50% after barc etch'''<br>
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|<!--'''T'''--> 0
|<!--'''T'''--> 0
|<!--'''Process time'''--> 10min
|<!--'''Process time'''--> 10min
|<!--'''Comment'''--> From Peixiong
|width="400"|<!--'''Comment'''--> From Peixiong
|<!--'''Results'''-->
|width="400"|<!--'''Results'''-->
[[File:S0061066_n02.jpg|100px|frameless]] [[File:S006106_n04.jpg|100px|frameless]]
[[File:S0061066_n02.jpg|100px|frameless]] [[File:S006106_n04.jpg|100px|frameless]]
|<!--'''CD change (mask 55% trench) after s007467 is it <50% after barc etch'''<br>
|<!--'''CD change (mask 55% trench) after s007467 is it <50% after barc etch'''<br>