Jump to content

Specific Process Knowledge/Etch/ICP Metal Etcher/silicon oxide/By BGHE: Difference between revisions

Bghe (talk | contribs)
Bghe (talk | contribs)
Line 19: Line 19:
! '''Comment'''
! '''Comment'''
! width="400"|'''Results'''
! width="400"|'''Results'''
! '''CD change (mask 55% trench) after s007467 is it <50% after barc etch'''<br>
! width="400"|'''CD change (mask 55% trench) after s007467 is it <50% after barc etch'''<br>
trench opening as a fraction of pitch
trench opening as a fraction of pitch
! '''Profile angles'''
! '''Profile angles'''