Specific Process Knowledge/Thermal Process/Oxidation/Wet oxidation C1 furnace: Difference between revisions
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The Anneal Oxide furnace (C1) is the used for annealing, wet and dry oxidation of 4" and 6" wafers. | |||
Water vapour for wet oxidation is generated by use of a steamer ([[media:RASIRC_Steam_generator.pdf|RASIRC Steam Generator ]] ), which gives a very good oxide quality and uniformity. | |||
RCA cleaning is not required for new silicon wafers. Wafers from the A-stack, B-stack and E-stack furnaces and wafers from PECVD4 can go directly into the furnace. All other processed wafers will have to be RCA cleaned, before they are allowed in the furnace. | |||
The wet oxidation by Anneal Oxide Furnace(C1) can be used for growing silicon dioxide by using steamer ([[media:RASIRC_Steam_generator.pdf|RASIRC Steam Generator ]] ), which gives a very good film uniformity. The advantage of this furnace is the brand new wafers no need RCA clean before. | The wet oxidation by Anneal Oxide Furnace(C1) can be used for growing silicon dioxide by using steamer ([[media:RASIRC_Steam_generator.pdf|RASIRC Steam Generator ]] ), which gives a very good film uniformity. The advantage of this furnace is the brand new wafers no need RCA clean before. | ||