Specific Process Knowledge/Etch/Wet Polysilicon Etch: Difference between revisions
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==Wet PolySi Etch== | ==Wet PolySi Etch== | ||
[[Image:polyetch1.jpg|300x300px|thumb| | [[Image:polyetch1.jpg|300x300px|thumb|The 'Poly Si Etch' bath is placed inside Wet Bench 04 in cleanroom D-3]] | ||
The wet PolySi Etch is an isotropic silicon etch. This holds for both a poly-silicon thin-film as well as single-crystalline material such as a Si(100) surface. The | The wet PolySi Etch is an isotropic silicon etch. This holds for both a poly-silicon thin-film as well as single-crystalline material such as a Si(100) surface. The Poly Si Etch bath is placed inside 'Wet Bench 04: Oxide and Poly etch' cleanroom D-3. For samples that are not allowed in this bath the polysilicon etch solution can also be mixed in a plastic beaker in Fume hood 01 or 02 (Acids/bases). | ||
The PolySi Etch is typically used for opening holes in poly-silicon thin-films, using photoresist as an etch mask or to strip Poly silicon of a wafer. Due to its isotropic nature the under-etching (etch-bias) at least amounts to the thickness of the poly-silicon layer. Another example of usage is etching of "circular-shaped" holes in silicon substrates. | The PolySi Etch is typically used for opening holes in poly-silicon thin-films, using photoresist as an etch mask or to strip Poly silicon of a wafer. Due to its isotropic nature the under-etching (etch-bias) at least amounts to the thickness of the poly-silicon layer. Another example of usage is etching of "circular-shaped" holes in silicon substrates. | ||