Specific Process Knowledge/Bonding: Difference between revisions
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*[[Specific Process Knowledge/Thermal Process/C3 Anneal-bond furnace|C3 furnace anneal bond]] | *[[Specific Process Knowledge/Thermal Process/C3 Anneal-bond furnace|C3 furnace anneal bond]] | ||
== Choose bonding methods in | == Choose bonding methods in Wafer Bonder 2 == | ||
*[[/Eutectic bonding|Eutectic bonding]] | *[[/Eutectic bonding|Eutectic bonding]] | ||
Revision as of 14:40, 18 May 2017
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Choose equipment
Choose bonding methods in Wafer Bonder 2
Comparing the three bonding methods in the wafer bonder 2
| Eutectic bonding | Fusion bonding | Anodic bonding | |
|---|---|---|---|
| General description | For bonding two substrates by use of an interphase that makes an eutecticum. | For bonding two identical materials. | For bonding Si and Glass. |
| Bonding temperature | Depending on the eutecticum 310°C to 400°C. | Depending on defects 50°C to 400°C. | Depending on the voltage 300°C to 500°C Standard is 400°C. |
| Annealing temperature | No annealing | 1000°C-1100°C in the anneal bond furnace (C3). | No annealing |
| Materials possible to bond | Bonding of substrates is done by use of the eutectica Au/Si, Au/Sn and Au/Sn/Ni | Si/Si, SiO2/SiO2 | Si/Pyrex (glass) |
| Substrate size | Up to 6" | Up to 6" | Up to 6" |
| Cleaning | Cleaning by N2. | Wet chemical cleaning, IMEC. | Cleaning by N2. |
| Backside alignment | Double side polished wafers. | Double side polished wafers. | Not relevant. |