Specific Process Knowledge/Characterization/PL mapper: Difference between revisions
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Photoluminiscense mapping is a non-contact, non-destructive technique for mapping out uniformity of alloy composition, material quality and defects in substrates and of III-V epiwafers. The Rapid Photoluminiscense Mapper (RPM) is equipped with 3 lasers for PL measurements and a white-light source to map out thickness and reflectance of eg layers, microcavities and VCSELs. | Photoluminiscense mapping is a non-contact, non-destructive technique for mapping out uniformity of alloy composition, material quality and defects in substrates and of III-V epiwafers. The Rapid Photoluminiscense Mapper (RPM) is equipped with 3 lasers for PL measurements and a white-light source to map out thickness and reflectance of eg layers, microcavities and VCSELs. | ||
[[Image:Wafer-bonding PL-mapper (LabAdviser) Jehem.jpg|500px|right|thumb| | [[Image:Wafer-bonding PL-mapper (LabAdviser) Jehem.jpg|500px|right|thumb|Map of two bonded silicon wafers. Red areas are voids between the wafers]] | ||
It can also be used to map out voids after silicon wafer-bonding. This is done using the reflectance mapping and is using the fact that silicon is transparent for wavelengths above ~1000nm. A void will therefor change the reflectance in that wavelength range. See datasheet below (Thanks to Jens Hemmingsen for the data). | It can also be used to map out voids after silicon wafer-bonding. This is done using the reflectance mapping and is using the fact that silicon is transparent for wavelengths above ~1000nm. A void will therefor change the reflectance in that wavelength range. See datasheet below (Thanks to Jens Hemmingsen for the data). | ||